دورية أكاديمية
Characterization of Si and SiO x films deposited in very high-frequency excited atmospheric-pressure plasma and their application to bottom-gate thin film transistors.
العنوان: | Characterization of Si and SiO |
---|---|
المؤلفون: | Kakiuchi, Hiroaki, Ohmi, Hiromasa, Yamada, Takahiro, Tamaki, Shogo, Sakaguchi, Takayuki, Lin, WeiCheng, Yasutake, Kiyoshi |
المصدر: | Physica Status Solidi. A: Applications & Materials Science; Jul2015, Vol. 212 Issue 7, p1571-1577, 7p |
مصطلحات موضوعية: | SILICON, THIN films, MAGNETRON sputtering, ELLIPSOMETRY, MULTILAYERS |
مستخلص: | Silicon (Si) and its alloys, such as silicon oxides (SiO |
Copyright of Physica Status Solidi. A: Applications & Materials Science is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
قاعدة البيانات: | Complementary Index |
كن أول من يترك تعليقا!