التفاصيل البيبلوغرافية
| العنوان: |
Silicon doping from phosphorus spin-on dopant sources in proximity rapid thermal diffusion. |
| المؤلفون: |
Zagozdzon-Wosik, W., Grabiec, P.B., Lux, G. |
| المصدر: |
Journal of Applied Physics; 1/1/1994, Vol. 75 Issue 1, p337, 8p |
| مصطلحات موضوعية: |
RAPID thermal processing, DIFFUSION processes, PHOSPHORUS, SEMICONDUCTOR wafers, SEMICONDUCTOR doping |
| مستخلص: |
Rapid thermal diffusion (RTD) of phosphorus has been investigated using a spin-on dopant (SOD) deposited on a silicon wafer and placed as a dopant source in proximity to a processed Si wafer. In such a process, the efficiency of doping is affected by the amount of P supplied from the SOD to the processed wafer. Doping in RTD is controlled by the thickness of the SOD and its structure, which depends on low-temperature baking. Experimental results of secondary-ion-mass spectroscopy analyses and sheet resistance indicate that diffusion coefficients of phosphorus in the SOD during RTD are considerably larger than in thermal oxides. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |
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