التفاصيل البيبلوغرافية
| العنوان: |
Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures. |
| المؤلفون: |
Zhang, Z., Cardwell, D., Sasikumar, A., Kyle, E. C. H., Chen, J., Zhang, E. X., Fleetwood, D. M., Schrimpf, R. D., Speck, J. S., Arehart, A. R., Ringel, S. A. |
| المصدر: |
Journal of Applied Physics; 4/28/2016, Vol. 119 Issue 16, p1-6, 6p, 1 Diagram, 1 Chart, 8 Graphs |
| مصطلحات موضوعية: |
ELECTRIC properties of aluminum gallium nitride, HETEROSTRUCTURES, PROTONS, IRRADIATION, THRESHOLD voltage, ION traps |
| مستخلص: |
The impact of proton irradiation on the threshold voltage (VT) of AlGaN/GaN heterostructures is systematically investigated to enhance the understanding of a primary component of the degradation of irradiated high electron mobility transistors. The value of VT was found to increase monotonically as a function of 1.8MeV proton fluence in a sub-linear manner reaching 0.63V at a fluence of 1×1014 cm-2. Silvaco Atlas simulations of VT shifts caused by GaN buffer traps using experimentally measured introduction rates, and energy levels closely match the experimental results. Different buffer designs lead to different VT dependences on proton irradiation, confirming that deep, acceptorlike defects in the GaN buffer are primarily responsible for the observed VT shifts. The proton irradiation induced VT shifts are found to depend on the barrier thickness in a linear fashion; thus, scaling the barrier thickness could be an effective way to reduce such degradation. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |
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