التفاصيل البيبلوغرافية
| العنوان: |
Effects of multiple interruptions with trimethylindium-treatment in the InGaN/GaN quantum well on green light emitting diodes. |
| المؤلفون: |
Liang Qiao, Zi-Guang Ma, Hong Chen, Hai-Yan Wu, Xue-Fang Chen, Hao-Jun Yang, Bin Zhao, Miao He, Shu-Wen Zheng, Shu-Ti Li |
| المصدر: |
Chinese Physics B; Oct2016, Vol. 25 Issue 10, p1-1, 1p |
| مصطلحات موضوعية: |
INDIUM gallium nitride, QUANTUM wells, LIGHT emitting diodes, MICROFABRICATION, ELECTROLUMINESCENCE |
| مستخلص: |
In this study, the influence of multiple interruptions with trimethylindium (TMIn)-treatment in InGaN/GaN multiple quantum wells (MQWs) on green light-emitting diode (LED) is investigated. A comparison of conventional LEDs with the one fabricated with our method shows that the latter has better optical properties. Photoluminescence (PL) full-width at half maximum (FWHM) is reduced, light output power is much higher and the blue shift of electroluminescence (EL) dominant wavelength becomes smaller with current increasing. These improvements should be attributed to the reduced interface roughness of MQW and more uniformity of indium distribution in MQWs by the interruptions with TMIn-treatment. [ABSTRACT FROM AUTHOR] |
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