التفاصيل البيبلوغرافية
| العنوان: |
Laser Diodes (λ = 0.98 μm) with a Narrow Radiation Pattern and Low Internal Optical Losses. |
| المؤلفون: |
Slipchenko, S.O., Pikhtin, N.A., Fetisova, N.V., Khomylev, M.A., Marmalyuk, A.A., Nikitin, D.B., Padalitsa, A.A., Bulaev, P.V., Zalevski&icaron;, I.D., Tarasov, I.S. |
| المصدر: |
Technical Physics Letters; Dec2003, Vol. 29 Issue 12, p980-983, 4p |
| مصطلحات موضوعية: |
HETEROSTRUCTURES, GALLIUM arsenide, DIODES, OPTICAL losses, PHYSICAL optics, PHYSICS |
| مستخلص: |
Quantum-confined InGaAs/AlGaAs/GaAs heterostructures for laser diodes emitting at λ = 0.98 μm, optimized to provide for reduced radiation divergence in the vertical plane and decreased internal optical losses, have been synthesized by metalorganic-hydride vapor-phase epitaxy. For the obtained laser diodes the far field pattern full width at half-maximum in the vertical plane falls within 16°–19°, the internal optical losses are about 0.7 cm[sup –1], the internal quantum yield amounts to 97%, and the maximum continuous emission power reaches 8.6 W. © 2003 MAIK “Nauka / Interperiodica”. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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