التفاصيل البيبلوغرافية
| العنوان: |
Numerical Simulation of Multi-Crystalline Silicon Crystal Growth Using a Macro-Micro Coupled Method during the Directional Solidification Process. |
| المؤلفون: |
Qingqing Lian, Weina Liu, Ri Li, Wenbo Yan, Caichi Liu, Yingxin Zhang, Longxuan Wang, Hongjian Chen |
| المصدر: |
Applied Sciences (2076-3417); Jan2017, Vol. 7 Issue 1, p21, 13p |
| مصطلحات موضوعية: |
COMPUTER simulation, SILICON crystals, SOLIDIFICATION |
| مستخلص: |
In this work, the crystal growth of multi-crystalline silicon (mc-Si) during the directional solidification process was studied using the cellular automaton method. The boundary heat transfer coefficient was adjusted to get a suitable temperature field and a high-quality mc-Si ingot. Under the conditions of top adiabatic and bottom constant heat flux, the shape of the crystal-melt interface changes fromconcave to convexwith the decrease of the heat transfer coefficient on the side boundaries. In addition, the nuclei form at the bottom boundary while columnar crystals develop into silicon melt with amzigzag-faceted interface. The higher-energy silicon grains were merged into lower energy ones. In the end, the number of silicon grains decreases with the increase of crystal length. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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