التفاصيل البيبلوغرافية
| العنوان: |
Piezo-tunnel effect in Al/Al2O3/Al junctions elaborated by atomic layer deposition. |
| المؤلفون: |
Rafael, R., Puyoo, E., Malhaire, C. |
| المصدر: |
Journal of Applied Physics; 11/14/2017, Vol. 122 Issue 18, p1-5, 5p |
| مصطلحات موضوعية: |
PIEZOELECTRIC devices, DIELECTRIC devices, STRAIN sensors, PRESSURE sensors, STRAIN gages |
| مستخلص: |
In this work, the electrical transport in Al/Al2O3/Al junctions under mechanical stress is investigated in the perspective to use them as strain sensors. The metal/insulator/metal junctions are elaborated with a low temperature process (≤200 °C) fully compatible with CMOS back-end-of-line. The conduction mechanism in the structure is found to be Fowler-Nordheim tunneling, and efforts are made to extract the relevant physical parameters. Gauge factors up to -32.5 were found in the fabricated devices under tensile stress. Finally, theoretical mechanical considerations give strong evidence that strain sensitivity in Al/Al2O3/Al structures originates not only from geometrical deformations but also from the variation of interface barrier height and/or effective electronic mass in the tunneling oxide layer. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |
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