التفاصيل البيبلوغرافية
| العنوان: |
SIMULATIONS OF FIELD-PLATED AND RECESSED GATE GALLIUM NITRIDE-BASED HETEROJUNCTION FIELD-EFFECT TRANSISTORS. |
| المؤلفون: |
Turin, Valentin O., Shur, Michael S., Veksler, Dmitry B. |
| المصدر: |
Advanced Semiconductor Devices - Proceedings of the 2006 Lester Eastman Conference; 2007, p19-23, 5p |
| مصطلحات موضوعية: |
GALLIUM nitride, HETEROJUNCTION field effect transistors, CORE walls, ISOTHERMAL expansion, ELECTRIC field effects, THERMAL properties |
| قاعدة البيانات: |
Complementary Index |
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