مؤتمر
FIELD IONIZATION OF SHALLOW IMPURITIES AT RANDOM POTENTIAL.
| العنوان: | FIELD IONIZATION OF SHALLOW IMPURITIES AT RANDOM POTENTIAL. |
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| المؤلفون: | KAGAN, M. S., LANDSBERG, E. G., PETRISHCHEV, V. V., ZHDANOVA, N. G. |
| المصدر: | Shallow-Level Centers in Semiconductors - Proceedings of the 7th International Conference; 1997, p417-422, 6p |
| مصطلحات موضوعية: | SEMICONDUCTOR doping, GERMANIUM, SEMICONDUCTOR defects, IONIZATION (Atomic physics), ELECTRIC properties of semiconductors |
| قاعدة البيانات: | Complementary Index |
| ردمك: | 9789810229283 |
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