التفاصيل البيبلوغرافية
| العنوان: |
Cavity-enhanced photoluminescence of SiGe/Si multiquantum wells grown on silicon-on-insulator substrate. |
| المؤلفون: |
Li, C.B., Huang, C.J., Cheng, B.W., Zuo, Y.H., Mao, R.W., Luo, L.P., Yu, J.Z., Wang, Q.M. |
| المصدر: |
Journal of Applied Physics; 5/15/2004, Vol. 95 Issue 10, p5914-5916, 3p, 1 Diagram, 3 Graphs |
| مصطلحات موضوعية: |
QUANTUM wells, SILICON compounds, SILICON, PHOTOLUMINESCENCE, SILICON-on-insulator technology, INTERFACES (Physical sciences) |
| مستخلص: |
Sharp and strong room-temperature photoluminescence (PL) of the Si 0.59 Ge 0.41/Si multiquantum wells grown on the silicon-on-insulator substrate is investigated. The cavity formed by the mirrors at the surface and the buried SiO 2 interface enhances the PL emission and has a wavelength-selective effect on the luminescence. The peak position is consistent with the simulation result and independent of the exciting power, which indicates a strong cavity effect on the room-temperature PL. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |
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