التفاصيل البيبلوغرافية
| العنوان: |
Total Ionizing Dose Effects of 55-nm Silicon-Oxide-Nitride-Oxide-Silicon Charge Trapping Memory in Pulse and DC Modes. |
| المؤلفون: |
Mei Li, Jin-Shun Bi, Yan-Nan Xu, Bo Li, Kai Xi, Hai-Bin Wang, Jing-Liu, Jin-Li, Lan-Long Ji, Li Luo, Ming Liu |
| المصدر: |
Chinese Physics Letters; Jun2018, Vol. 35 Issue 7, p1-1, 1p |
| مصطلحات موضوعية: |
SILICON oxide, THRESHOLD voltage, RADIATION doses, DIRECT currents, ELECTRIC charge |
| مستخلص: |
The60Co-γ ray total ionizing dose radiation responses of 55-nm silicon-oxide-nitride-oxide-silicon (SONOS) memory cells in pulse mode (programmed/erased with pulse voltage) and dc mode (programmed/erased with direct voltage sweeping) are investigated. The threshold voltage and off-state current of memory cells before and after radiation are measured. The experimental results show that the memory cells in pulse mode have a better radiation-hard capability. The normalized memory window still remains at 60% for cells in dc mode and 76% for cells in pulse mode after 300 krad(Si) radiation. The charge loss process physical mechanisms of programmed SONOS devices during radiation are analyzed. [ABSTRACT FROM AUTHOR] |
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