التفاصيل البيبلوغرافية
| العنوان: |
A Low-Voltage 40-GHz Complementary VCO With 15% Frequency Tuning Range in SOI CMOS Technology. |
| المؤلفون: |
Fong, Neric, Jonghae Kim, Plouchart, Jean-Olivier, Zamdmer, Noah, Duixian Liu, Wagner, Lawrence, Plett, Calvin, Tarr, Garry |
| المصدر: |
IEEE Journal of Solid-State Circuits; May2004, Vol. 39 Issue 5, p841-846, 6p, 2 Diagrams, 2 Charts, 6 Graphs |
| مصطلحات موضوعية: |
COMPLEMENTARY metal oxide semiconductors, ELECTRIC oscillators, SILICON-on-insulator technology, INTEGRATED circuits, ELECTRIC noise, FREQUENCY response |
| مستخلص: |
The design of a low-voltage 40-GHz complementary voltage-controlled oscillator (VCO) with 15% frequency tuning range fabricated in 0.13-µm partially depleted silicon-on-insulator (SOI) CMOS technology is reported. Technological advantages of SOI over bulk CMOS are demonstrated, and the accumulation MOS (AMOS) varactor limitations on frequency tuning range are addressed. At 1.5-V supply, the VCO core and each output buffer consumes 11.25 mW and 3 mW of power, respectively. The measured phase noise at 40-GHz is -109.73 dBc/Hz at 4-MHz offset from the carrier, and the output power is -8 dBm. VCO performance using high resistivity substrate (∼300-Ω·cm) has the same frequency tuning range but 2 dB better phase noise compared with using low resistivity substrate (10 Ω·cm). The VCO occupies a chip area of only 100 µm by 100 µm (excluding pads). |
| قاعدة البيانات: |
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