دورية أكاديمية

Broadband characteristics of a parallel diode linearized amplifier.

التفاصيل البيبلوغرافية
العنوان: Broadband characteristics of a parallel diode linearized amplifier.
المؤلفون: Ka Tsun Mok, Wing Shing Chan, Chun Kai Leung, Chi Sun Yun, Chung Wai Li
المصدر: Microwave & Optical Technology Letters; 1/20/2003, Vol. 36 Issue 2, p82-83, 2p, 1 Diagram, 3 Graphs
مصطلحات موضوعية: POWER amplifiers, BROADBAND amplifiers, DISTRIBUTED amplifiers, ELECTRONIC amplifiers, DIODES
مستخلص: A compact broadband linearized amplifier, using a parallel-configured diode connected directly to the base of the transistor, is proposed. It has shown a reduction in spectral re-growth of 8–20 dB for the first sidelobe in the frequency range of 0.8–2 GHz. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 36: 82–83, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10680 [ABSTRACT FROM AUTHOR]
Copyright of Microwave & Optical Technology Letters is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
قاعدة البيانات: Complementary Index
الوصف
تدمد:08952477
DOI:10.1002/mop.10680