التفاصيل البيبلوغرافية
| العنوان: |
Surface Morphology Improvement of Non-Polar a-Plane GaN Using a Low-Temperature GaN Insertion Layer. |
| المؤلفون: |
Shen Yan, Xiao-Tao Hu, Jun-Hui Die, Cai-Wei Wang, Wei Hu, Wen-Liang Wang, Zi-Guang Ma, Zhen Deng, Chun-Hua Du, Lu Wang, Hai-Qiang Jia, Wen-Xin Wang, Yang Jiang, Guoqiang Li, Hong Chen |
| المصدر: |
Chinese Physics Letters; Mar2020, Vol. 37 Issue 3, p1-1, 1p |
| مصطلحات موضوعية: |
SURFACE morphology |
| مستخلص: |
We demonstrate that a low-temperature GaN insertion layer could significantly improve the surface morphology of non-polar a-plane GaN.The two key factors in improving the surface morphology of non-polar a-plane GaN are growth temperature and growth time of the GaN insertion layer. The root-mean-square roughness of a-plane GaN is reduced by 75% compared to the sample without the GaN insertion layer. Meanwhile, the GaN insertion layer is also beneficial for improving crystal quality. This work provides a simple and effective method to improve the surface morphology of non-polar a-plane GaN. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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