التفاصيل البيبلوغرافية
| العنوان: |
Investigation of Pd/MoOx/n-Si diodes for bipolar transistor and light-emitting device applications. |
| المؤلفون: |
Gupta, Gaurav, D. Thammaiah, Shivakumar, Nanver, Lis K., Hueting, Raymond J. E. |
| المصدر: |
Journal of Applied Physics; 8/7/2020, Vol. 128 Issue 5, p1-13, 13p, 3 Diagrams, 11 Graphs |
| مصطلحات موضوعية: |
BIPOLAR transistors, TRANSISTORS, DIODES, SCHOTTKY barrier diodes, PHYSICAL vapor deposition, LIGHT emitting diodes |
| مستخلص: |
Sub-stoichiometric molybdenum oxide (MoO x) has recently been investigated for application in high efficiency Si solar cells as a "hole selective" contact. In this paper, we investigate the electrical and light-emitting properties of MoO x -based contacts on Si from the viewpoint of realizing functional bipolar devices such as light-emitting diodes (LEDs) and transistors without any impurity doping of the Si surface. We realized diodes on n-type Si substrates using e-beam physical vapor deposition of Pd/MoO x contacts and compared their behavior to implanted p + n-Si diodes as a reference. In contrast to majority-carrier dominated conduction that occurs in conventional Schottky diodes, Pd/MoO x /n-Si diodes show minority-carrier dominated charge transport with I–V, C–V, and light-emitting characteristics comparable to implanted counterparts. Utilizing such MoO x -based contacts, we also demonstrate a lateral bipolar transistor concept without employing any doped junctions. A detailed C–V analysis confirmed the excessive band-bending in Si corresponding to a high potential barrier (> --> 0.90 V) at the MoO x /n-Si interface which, along with the observed amorphous SiO x (Mo) interlayer, plays a role in suppressing the majority-carrier current. An inversion layer at the n-Si surface was also identified comprising a sheet carrier density greater than 8.6 × 10 11 cm − 2 , and the MoO x layer was found to be conductive though with a very high resistivity in the 10 4 Ω -cm range. We refer to these diodes as metal/non-insulator/semiconductor diodes and show with our device simulations that they can be mimicked as high-barrier Schottky diodes with an induced inversion layer at the interface. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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