التفاصيل البيبلوغرافية
| العنوان: |
Investigation of the Electronic Structure of Cd4GeSe6 by Photoelectrochemical and Photoluminescence Methods. |
| المؤلفون: |
Kovách, S., Nemcsics, A., Lábadi, Z., Motrya, S. |
| المصدر: |
Inorganic Materials; Feb2003, Vol. 39 Issue 2, p108-112, 5p |
| مصطلحات موضوعية: |
CADMIUM compounds, CRYSTALS, ELECTRONIC structure, PHOTOLUMINESCENCE, INDUSTRIAL chemistry, INORGANIC chemistry |
| مستخلص: |
The Cd4GeSe6 crystals were grown by the chemical vapor transport method. The crystals were characterized by photoelectrochemical and photoluminescence methods and were found to be n-type, with a 1.759 eV direct band gap. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |
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