التفاصيل البيبلوغرافية
| العنوان: |
红外 LED 用 GaAs 单晶的垂直梯度 凝固制备研究. (Chinese) |
| Alternate Title: |
Prepration of GaAs Single Crystal for Infrared LED by Vertical Gradient Freeze Technology. (English) |
| المؤلفون: |
路淑娟, 陈蓓曦, 张 路, 曹 波, 张云博, 马志永, 齐兴旺, 于洪国 |
| المصدر: |
Journal of Synthetic Crystals; Feb2023, Vol. 52 Issue 2, p235-243, 9p |
| مصطلحات موضوعية: |
SINGLE crystals, CARRIER density, CRYSTAL growth, CHARGE carrier mobility, DISLOCATION density, GALLIUM arsenide, FUSED silica, HOT carriers |
| Abstract (English): |
GaAs single crystal is one of the main substrate materials for optoelectronic devices, and has important applications in infrared LED. However, its high impurity concentration and low carrier mobility seriously restrict the performance of infrared LED devices. To obtain silicon doped GaAs single crystals prepared by vertical gradient freeze (VGF) method with low impurity concentration, high mobility, uniform carrier distribution and high utilization ratio, the influences of thermal field distribution, materials of synthetic boat and furnace, and process parameters on crystal quality, impurity concentration, mobility and carrier distribution of single crystal were studied in this paper. CGSim software was used to conduct numerical simulation research on the thermal field system of single crystal growth thermal field. When the length ratio from temperature zone 1 to temperature zone 6 is 8∶12∶9∶5∶5∶7, the constant temperature zone reaches the longest, the dislocation density is below 1 000 cm - 2, and the crystallization rate reaches 85% . With GaAs polycrystalline synthesized by roughening quartz synthesis boat, and the mullite furnace replacing the quartz furnace, GaAs single crystals with overall mobility higher than 3 000 cm 2 /(V · s) were obtained. The process parameters of single crystal growth were studied. The axial carrier concentration uniformity of single crystal is improved by increasing the head pulling speed and decreasing the tail pulling speed, by which the carrier concentration difference between the head and tail is reduced by 33%, and the tail mobility increase from 2 900 cm 2 /(V·s) to 3 560 cm 2 / (V·s). The effective utilization length of single crystal gains increase by 33%, and the utilization rate of single crystal reaches 75%, which greatly reduces the raw material consumption cost. [ABSTRACT FROM AUTHOR] |
| Abstract (Chinese): |
GaAs 单晶是当前光电子器件的主要衬底材料之一,在红外 LED 中有着重要应用。 但杂质浓度高、迁移率低等 缺点会严重影响红外 LED 器件性能。 为生产出低杂质浓度、高迁移率、载流子分布均匀、高利用率的红外 LED 用掺 硅垂直梯度凝固(VGF)法 GaAs 单晶,本文研究了热场分布、合成舟和炉膛材质、工艺参数对单晶的成晶质量、杂质浓 度、迁移率、载流子分布的影响。 利用 CGSim 软件对单晶生长热场系统进行数值模拟研究,温区一至温区六长度比例 为 8∶12∶9∶5∶5∶7 时,恒温区达到最长,位错密度达到 1 000 cm - 2 以下,成晶率达到 85% 。 采用打毛石英合成舟进行 GaAs 合成,用莫来石炉膛替代石英炉膛,可以获得迁移率整体高于 3 000 cm ² / (V·s)的 GaAs 单晶,满足红外 LED 使 用要求。 对单晶生长工艺参数展开研究,采用提高头部生长速度、降低尾部生长速度的方式提高单晶轴向载流子浓 度均匀性,头尾部载流子浓度差降低 33%,尾部迁移率从 2 900 cm ² / (V·s)提高到 3 560 cm 2 / (V·s)。 单晶有效利 用长度提高 33%,单晶利用率达到 75%,大幅降低了原料损耗成本。 [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |
