دورية أكاديمية

Self-Powered Sb 2 Te 3 /MoS 2 Heterojunction Broadband Photodetector on Flexible Substrate from Visible to Near Infrared.

التفاصيل البيبلوغرافية
العنوان: Self-Powered Sb 2 Te 3 /MoS 2 Heterojunction Broadband Photodetector on Flexible Substrate from Visible to Near Infrared.
المؤلفون: Wang, Hao, Dong, Chaobo, Gui, Yaliang, Ye, Jiachi, Altaleb, Salem, Thomaschewski, Martin, Movahhed Nouri, Behrouz, Patil, Chandraman, Dalir, Hamed, Sorger, Volker J.
المصدر: Nanomaterials (2079-4991); Jul2023, Vol. 13 Issue 13, p1973, 12p
مصطلحات موضوعية: HETEROJUNCTIONS, P-N heterojunctions, THIN film transistors, OPTICAL detectors, PHOTODETECTORS, VISIBLE spectra
مستخلص: Van der Waals (vdWs) heterostructures, assembled by stacking of two-dimensional (2D) crystal layers, have emerged as a promising new material system for high-performance optoelectronic applications, such as thin film transistors, photodetectors, and light-emitters. In this study, we showcase an innovative device that leverages strain-tuning capabilities, utilizing a MoS2/Sb2Te3 vdWs p-n heterojunction architecture designed explicitly for photodetection across the visible to near-infrared spectrum. These heterojunction devices provide ultra-low dark currents as small as 4.3 pA, a robust photoresponsivity of 0.12 A W−1, and reasonable response times characterized by rising and falling durations of 0.197 s and 0.138 s, respectively. These novel devices exhibit remarkable tunability under the application of compressive strain up to 0.3%. The introduction of strain at the heterojunction interface influences the bandgap of the materials, resulting in a significant alteration of the heterojunction's band structure. This subsequently shifts the detector's optical absorption properties. The proposed strategy of strain-induced engineering of the stacked 2D crystal materials allows the tuning of the electronic and optical properties of the device. Such a technique enables fine-tuning of the optoelectronic performance of vdWs devices, paving the way for tunable high-performance, low-power consumption applications. This development also holds significant potential for applications in wearable sensor technology and flexible electro-optic circuits. [ABSTRACT FROM AUTHOR]
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قاعدة البيانات: Complementary Index
الوصف
تدمد:20794991
DOI:10.3390/nano13131973