التفاصيل البيبلوغرافية
العنوان: |
Dynamic terahertz wave propagation through Al/Ni based multilayer spin valve structures. |
المؤلفون: |
Acharyya, Nityananda, Sajeev, Vaishnavi, Rane, Shreeya, Karmakar, Subhajit, Roy Chowdhury, Dibakar |
المصدر: |
Journal of Applied Physics; 7/21/2023, Vol. 134 Issue 3, p1-10, 10p |
مصطلحات موضوعية: |
SPIN valves, SUBMILLIMETER waves, THEORY of wave motion, MAGNETIC flux density, CONDUCTION electrons, MAGNETIC fields |
مستخلص: |
Metal-based magnetic multilayers are primarily responsible for giant-magnetoresistance (GMR) that play a pivotal role in magnetic memory devices besides other spintronic applications. Spin-dependent conduction of electrons steered by spin-dependent scattering across interfaces of the ferromagnetic (FM)/nonmagnetic multilayers lies at the core of GMR phenomena. In this context, the thickness dependent magnetoresistive effect in five-layer Al/Ni/Al/Ni/Al spin valve structures is explored through contactless terahertz (THz) spectroscopy. Our experiments reveal magnetic field dependent conductivity enhancement in the multilayer configuration of a FM (nickel, Ni) layer and a nonmagnetic (aluminum, Al) spacer layer under the application of relatively low intensity magnetic fields (0–30 mT) manifesting a substantial ground for low power THz magnetism. In addition, influence of similar magnetic fields is probed for relatively thicker spacers (10 nm ≤ x ≤ 20 nm) that can form a platform for dynamically controllable THz devices. Our studies demonstrate a maximum THz peak amplitude modulation of around 48% for a 10 nm thick nonmagnetic spacer layer (Al layer) along with a significant relative modulation (∼97%) in THz conductivities. Such tuning of THz characteristics bears great potential in realizing dynamically reconfigurable THz and magnetoresistive devices by suitably exploiting multilayer spin valve configuration. [ABSTRACT FROM AUTHOR] |
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قاعدة البيانات: |
Complementary Index |