التفاصيل البيبلوغرافية
| العنوان: |
A 16-Mb MRAM Featuring Bootstrapped Write Drivers. |
| المؤلفون: |
Gogl, Dietmar, Arndt, Christian, Barwin, John C., Bette, Alexander, DeBrosse, John, Gow, Earl, Hoenigschmid, Heinz, Lammers, Stefan, Lamorey, Mark, Yu Lu, Maffitt, Tom, Maloney, Kim, Obermaier, Werner, Sturm, Andre, Viehmann, Hans, Willmott, Dennis, Wood, Mark, Gallagher, William J., Mueller, Gerhard, Sitaram, Arkalgud R. |
| المصدر: |
IEEE Journal of Solid-State Circuits; Apr2005, Vol. 40 Issue 4, p902-908, 7p, 15 Color Photographs, 6 Diagrams, 1 Chart, 5 Graphs |
| مصطلحات موضوعية: |
RANDOM access memory, COMPUTER storage devices, ELECTRONIC circuit design, COMPLEMENTARY metal oxide semiconductors, INTEGRATED circuits |
| مستخلص: |
A 16-Mb magnetic random access memory (MRAM) is demonstrated in 0.18-µm three-Cu-level CMOS with a three-level MRAM process adder. The chip, the highest density MRAM reported to date, utilizes a 1.42 µm² 1-transistor 1-magnetic tunnel junction (1T1MTJ) cell, measures 79 mm² and features a × 16 asynchronous SRAM-like interface. The paper describes the cell, architecture, and circuit techniques unique to multi-Mb MRAM design, including a novel bootstrapped write driver circuit. Hardware results are presented. [ABSTRACT FROM AUTHOR] |
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