التفاصيل البيبلوغرافية
| العنوان: |
Stacking order, charge doping, and strain-induced switching between AFM and FM in bilayer GdI2. |
| المؤلفون: |
Li, Shujing, Hou, Yuefei, Zhou, Mei, Li, Menglei, Zheng, Fawei, Shao, Xiaohong, Zhang, Ping |
| المصدر: |
Journal of Applied Physics; 9/28/2023, Vol. 134 Issue 12, p1-9, 9p |
| مصطلحات موضوعية: |
TUNNEL field-effect transistors, FIELD-effect devices, CUPRATES, PHASE shift (Nuclear physics) |
| مستخلص: |
GdI 2 monolayer is a promising material for spintronics applications due to its robust room-temperature ferromagnetism and sizable valley polarization. In two-dimensional van der Waals magnets, interlayer magnetic coupling plays a crucial role in device applications. The performance of these devices can be effectively tuned by adjusting the stacking order, charge doping, and strain. By performing first-principles calculations, we have demonstrated that the interlayer magnetic coupling in bilayer GdI 2 is highly dependent on the stacking order, which can be tuned between ferromagnetic (FM) and antiferromagnetic orders through lateral shifting. Furthermore, the interlayer magnetic coupling can also be tuned by charge doping and strain, where both electron and hole doping can enhance the FM coupling interaction between layers, and the interlayer FM coupling can be strengthened with increasing biaxial tensile strain. These results show that bilayer GdI 2 has rich tunable interlayer magnetic interactions, which can be used in designing interesting spin tunnel field-effect transistor devices. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |
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