دورية أكاديمية

Crystalline and transport characteristics of ferrimagnetic and antiferromagnetic phases in Mn3Ga films.

التفاصيل البيبلوغرافية
العنوان: Crystalline and transport characteristics of ferrimagnetic and antiferromagnetic phases in Mn3Ga films.
المؤلفون: Chen, Shaohai, Lin, Dennis J. X., Lim, B. C., Tan, Hang Khume, Hnin, Yu Yu Ko, Wong, Seng Kai, Lim, Idayu, Lim, Royston J. J., Khoo, Khoong Hong, Ho, Pin
المصدر: APL Materials; Oct2023, Vol. 11 Issue 10, p1-9, 9p
مصطلحات موضوعية: MAGNETIC films, CRYSTAL structure, MAGNETIC anisotropy, SURFACE energy, DENSITY functional theory, TANTALUM, QUANTUM spin Hall effect, BUFFER layers, SEMIMETALS
مستخلص: The Mn3Ga material is a promising candidate for memory and computing devices owing to its rich crystalline structures of tunable ferrimagnetic and collinear and non-collinear antiferromagnetic phases. In particular, Mn3Ga with non-collinear antiferromagnetic order exhibits giant anomalous and topological Hall conductivities and is a potential material platform for hosting spin-related quantum phenomena. In this study, we demonstrate Mn3Ga films grown on thermally oxidized Si substrates, with and without the Ta buffer, under different deposition temperatures (Ts). With increasing Ts, the dominant crystalline structure across all Mn3Ga films evolves from a cubic to hybrid tetragonal and hexagonal texture, wherein the crystalline orientation of spins endows the films with in-plane magnetic anisotropy. For Ta/Mn3Ga and Mn3Ga films grown under high Ts, the inhomogeneity in surface energy of the buffer layer results in a non-uniform granular film in the former. Notably, the Mn3Ga films of hexagonal texture exhibit topological Hall signatures. The density functional theory calculations on the hexagonal Mn3Ga phase corroborated with the experimental magnetic, structural, and transport properties. These findings establish an important platform for tailoring Mn3Ga films toward multifunctional applications. [ABSTRACT FROM AUTHOR]
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قاعدة البيانات: Complementary Index
الوصف
تدمد:2166532X
DOI:10.1063/5.0170501