التفاصيل البيبلوغرافية
| العنوان: |
IGZO/SnOx-based dynamic memristor with fading memory effect for reservoir computing. |
| المؤلفون: |
Lee, Subaek, Park, Yongjin, Jung, Sungyeop, Kim, Sungjun |
| المصدر: |
Journal of Chemical Physics; 12/21/2023, Vol. 159 Issue 23, p1-10, 10p |
| مصطلحات موضوعية: |
PATTERN recognition systems, X-ray photoelectron spectroscopy, SHORT-term memory, BIOLOGICAL systems, TRANSMISSION electron microscopy |
| مستخلص: |
We investigate a synaptic device with short-term memory characteristics using IGZO/SnOx as the switching layer. The thickness and components of each layer are analyzed by using x-ray photoelectron spectroscopy and transmission electron microscopy. The memristor exhibits analog resistive switching and a volatile feature with current decay over time. Moreover, through ten cycles of potentiation and depression, we demonstrate stable conductance modulation, leading to high-accuracy Modified National Institute of Standards and Technology pattern recognition. We effectively emulate the learning system of a biological synapse, including paired-pulse facilitation, spiking-amplitude-dependent plasticity, and spiking-rate-dependent plasticity (SRDP) by pulse trains. Ultimately, 4-bit reservoir computing divided into 16 states is incarnated using a pulse stream considering short-term memory plasticity and decay properties. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |
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