التفاصيل البيبلوغرافية
| العنوان: |
Excellent electrostatic control and gate reliability for breakdown enhanced AlGaN/GaN HEMTs with extreme permittivity BaTiO3. |
| المؤلفون: |
Hao, Lin, Hu, Tiancheng, Guo, Hui, Pan, Danfeng, Ye, Jiandong, Zhou, Yugang, Lu, Hai, Zhang, Rong, Zheng, Youdou, Chen, Dunjun |
| المصدر: |
Applied Physics Letters; 4/8/2024, Vol. 124 Issue 15, p1-5, 5p |
| مصطلحات موضوعية: |
PERMITTIVITY, BREAKDOWN voltage, GALLIUM nitride, ELECTRONIC equipment, ELECTRIC fields, DIELECTRICS |
| مستخلص: |
In this Letter, we investigated the electrostatic control capability and gate reliability of the BaTiO3 integrated AlGaN/GaN HEMTs. The fabricated HEMT exhibits a high peak maximum transconductance of 141 mS/mm, a large ON/OFF current ratio of 4.1 × 109, and a small subthreshold swing of 70.6 mV/dec, attributed to the gate leakage suppression and prominent gate coupling. These parameters demonstrate that the HEMT device with extreme permittivity BaTiO3 dielectric has the excellent electrostatic control capability. A high breakdown voltage of 1348 V was also achieved thanks to the screening of the negative gate image charges and the resulting improvement of electric field distribution by using double-layer BaTiO3 with the wrapped gate structure. Furthermore, gate bias step-stress and pulse I–V measurements show that the device exhibits a small VTH shift of 0.06 V at 2 V bias stress and a slight current collapse of ∼2.7% accompanied with a 6.0% RON increment at a quiescent drain bias VDSQ = 30 V, which benefits from the high quality of the dielectrics/AlGaN interface with Dit of 8.87 × 1012 eV−1/cm2. These findings elucidate the immense potential of extreme permittivity dielectrics engineering in achieving high-performance AlGaN/GaN power electronic devices. [ABSTRACT FROM AUTHOR] |
|
Copyright of Applied Physics Letters is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) |
| قاعدة البيانات: |
Complementary Index |
Find this article in full text from Scitation.