التفاصيل البيبلوغرافية
| العنوان: |
Demonstration of scaling and monolithic stacking for higher integration of integrated circuit using c -axis aligned crystalline oxide semiconductor FET. |
| المؤلفون: |
Sawai, Hiromi, Kurata, Motomu, Murakawa, Tsutomu, Ando, Yoshinori, Fukushima, Kunihiro, Eto, Ryota, Sasagawa, Shinya, Sugaya, Kentaro, Hodo, Ryota, Mizuguchi, Toshiki, Komura, Yusuke, Kunitake, Hitoshi, Takagi, Shinichi, Yamazaki, Shunpei |
| المصدر: |
Japanese Journal of Applied Physics; May2024, Vol. 63 Issue 5, p1-5, 5p |
| مستخلص: |
C -axis-aligned crystalline oxide semiconductor (CAAC-OS) FETs exhibit extremely low off-state leakage current and thus are suitable for low-power devices. Furthermore, CAAC-OS FETs can be integrated in the back end of line process and are promising as memory devices. For higher integration using the CAAC-OS FETs, we examined scaling and monolithic stacking. In addition, we present a 3D dynamic random access memory prototype, which is formed using three-layer monolithically stacked CAAC-OS FETs on a Si-CMOS and exhibits long-term data retention owing to the ultralow off-leakage current. These techniques will contribute to higher speed and integration of memory devices. [ABSTRACT FROM AUTHOR] |
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