التفاصيل البيبلوغرافية
| العنوان: |
New GAA FinFET without n-well or p-well. |
| Alternate Title: |
Новий транзистор GAA FinFET без n- і p-каналів. (Ukrainian) |
| المؤلفون: |
Lazzaz, A., Bousbahi, K., Ghamnia, M. |
| المصدر: |
Journal of Nano- & Electronic Physics; 2024, Vol. 16 Issue 2, p1-5, 5p |
| مصطلحات موضوعية: |
METAL oxide semiconductors, COMPLEMENTARY metal oxide semiconductors, STRAY currents, METAL oxide semiconductor field-effect transistors, ELECTRONIC industries |
| مستخلص: |
The reduction in size of metal oxide semiconductor (MOS) devices results in the increase of leakage current due to Quantum effects. The different technologies proposed to overcome this problem. Variant structures of MOSFET such as Tri Gate FinFET or Pi gate and Omega gate to enhance current drive and control over the Short Channel Effects (SCE). In advanced technology node, the performance of CMOS circuits degrades. In sub 10 nm nodes technologies, FinFETs have a good channel control with high ON current (ION).Nowadays, power dissipation and leakage current are one the two crucial issues that the modern electronic industry is facing in 3 nm node technology. The other alternative devices such as novel GAA (Gate All Around) FinFET have been proposed to address these problems. This structure gained huge attention because of their possible fabrication process.In this paper, for the first time, we have investigated and simulated the different electrical characteristics of GAA FinFET 3 nm with N channel using HfO2 (high k material oxide) to improve the subthreshold characteristics. In the second part of this paper, we present a novel correction for the equations used in this technology because no n-well layer is required anymore as the device channel is totally surrounded by the gate which enables the placement of n and p devices in a CMOS gate much closer to each other than previous technologies. [ABSTRACT FROM AUTHOR] |
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