التفاصيل البيبلوغرافية
| العنوان: |
The use of He buffer gas for moderating the plume kinetic energy during Nd:YAG-PLD growth of EuxY2−xO3 phosphor films. |
| المؤلفون: |
Suzuki, Shizuka, Dazai, Takuro, Tokunaga, Tomoharu, Yamamoto, Takahisa, Katoh, Ryuzi, Lippmaa, Mikk, Takahashi, Ryota |
| المصدر: |
Journal of Applied Physics; 5/21/2024, Vol. 135 Issue 19, p1-10, 10p |
| مصطلحات موضوعية: |
YTTRIUM aluminum garnet, GARNET, KINETIC energy, ALUMINUM films, MOLECULAR beam epitaxy, PULSED laser deposition, OXIDE coating, PHOSPHORS |
| مستخلص: |
We have investigated the He buffer gas process of moderating the kinetic energy of the pulsed laser deposition (PLD) plume during EuxY2−xO3 phosphor film growth. When using a neodymium yttrium aluminum garnet laser for PLD thin film growth, the kinetic energy of the ablation plumes can be high enough to cause the formation of point defects in the film. The buffer gas pressure is an important process parameter in PLD film growth. We find that the presence of the He buffer gas reduces the kinetic energy of the laser deposition plume through many low-angle collisions in the gas phase by a factor of 7 without reducing the deposition rate. This is because He is much lighter than any of the elements in the plume and it does not affect the composition of the oxide films. Consequently, the resputtering of the Y2O3 film surface by the plume was significantly suppressed in the presence of the He gas moderator, leading to a decrease of the defect density in the Y2O3 films. The improvement of the film quality was verified by a systematic analysis of time-resolved photoluminescence (PL) data for EuxY2−xO3 composition–gradient films. The PL lifetime and intensity of Eu0.2Y1.8O3, which shows the highest PL intensity, increased by 13.3% and 36.4%, respectively, when the He gas moderation process was used. The He buffer gas process is applicable to the PLD growth of the other oxide materials as well, where the reduction of the kinetic energy of the plume would bring the PLD process closer to the molecular beam epitaxy growth condition. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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