التفاصيل البيبلوغرافية
| العنوان: |
Deep trap engineering in Gd3GaO6:Bi3+ persistent phosphors through co-doping lanthanide ions. |
| المؤلفون: |
Du, Chengxue, Gao, Dangli, Hou, Xiaochun, Zhang, Xiangyu, Pang, Qing, Yun, Sining |
| المصدر: |
Journal of Materials Chemistry C; 7/7/2024, Vol. 12 Issue 25, p9284-9292, 9p |
| مستخلص: |
The development of luminescent materials for optical information encryption has received great attention in recent years. However, single-mode luminescent materials greatly limit their information capacity and encryption level. Here, a broad range of gadolinium gallate-based oxide persistent material systems with tuneable persistent luminescence (PersL) are rationally designed by the construction of electron–hole defect pair structures between Bi3+ and a set of lanthanide ions (Ln3+) (Ln = Eu, Sm, Tb, Dy, Pr and Ce). These phosphors exhibited excellent quadruple-mode luminescence including photoluminescence (PL), PersL, thermoluminescence (TL) and photo-stimulated luminescence (PSL). In particular, a quadruple-mode 'morning glory' encrypted pattern using these multimode persistent phosphors as storage media demonstrates multilevel optical information storage accompanied with dynamical encryption. These findings described here provide a universal methodology to construct a novel class of persistent materials with tuneable PersL emission and high information storage capacity. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |
