التفاصيل البيبلوغرافية
| العنوان: |
Universal strain engineering for enhancing the hole mobility and dopability in p-type semiconductors. |
| المؤلفون: |
Hu, Yaoqiao, Cho, Kyeongjae |
| المصدر: |
Journal of Applied Physics; 7/7/2024, Vol. 136 Issue 1, p1-12, 12p |
| مصطلحات موضوعية: |
HOLE mobility, P-type semiconductors, COMPOUND semiconductors, TRANSITION metal oxides, VALENCE bands |
| مستخلص: |
Modern electronic and optoelectronic devices rely on the development of the complementary pair of n-type and p-type semiconductors. However, it is often seen that n-type semiconductors are easier to realize and offer superior performances than their p-type counterparts, with p-type semiconductors showing much lower hole mobility and inefficient carrier doping. Here, by using first-principles studies, we demonstrate that lattice strain engineering can be a universal approach to enhance the hole mobility and dopability in p-type semiconductors. A broad class of p-type semiconductors, including anion p orbital derived valence band compounds (nitrides, oxides, halides, and chalcogenides), s orbital based post-transition metal oxides (e.g., SnO), and d-orbital based transition metal oxides (e.g., NiO), have been applied on strain to demonstrate their valence band modulation ability for the purpose of increasing the hole mobility and p-type dopability. We show that compressive lattice strain generally results in an upshifted valence band edge and reduced effective hole mass, leading to enhanced p-type dopability and increased hole mobility. Our work highlights strain engineering as a universal and effective approach for achieving better performed p-type compound semiconductors. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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