التفاصيل البيبلوغرافية
| العنوان: |
Impact of crystallographic facet of InGaN micro-LED sidewalls on electro-optical characteristics. |
| المؤلفون: |
Lex, A., Avramescu, A., Vögl, F., Brandl, M., Binder, M., Hetzl, M., Spende, H., Wolter, S., Waag, A., von Malm, N. |
| المصدر: |
Journal of Applied Physics; 7/14/2024, Vol. 136 Issue 2, p1-9, 9p |
| مصطلحات موضوعية: |
INDIUM gallium nitride, SURFACE passivation, QUANTUM efficiency, SURFACE recombination, SURFACE defects |
| مستخلص: |
InGaN micro-LEDs (μ LEDs) with their potential high-volume applications have attracted substantial research interest in the past years. In comparison to other III–V semiconductors, InGaN exhibits a reduced susceptibility toward non-radiative surface recombination. However, efficiency degradation becomes more prominent as dimensions shrink to a few μ m or less. Due to the high surface-to-volume ratio of the miniaturized devices, the non-radiative recombination increases and reduces the internal quantum efficiency. While many groups focus on surface passivation to mitigate surface defects, the influence of crystallographic orientation of the μ LED sidewall on the efficiency remains unexplored. This study addresses this gap by investigating the impact of crystallographic orientation of the sidewalls on the emission properties of the μ LEDs. Hexagonal and elongated μ LEDs with dimensions as small as 3.5 μ m and sidewalls with crystallographically well-defined m- and a-planes were fabricated. Electrical and optical properties were investigated using photo- and electroluminescence. External quantum efficiency (EQE) is assessed based on well-known carrier recombination models. It can be shown that μ LED performance intrinsically depends on the crystallographic orientation of the sidewalls. Comparing hexagonal μ LED structures with a-plane and m-plane sidewalls, an increase in the EQE by 33 % was observed for structures with a-plane sidewalls, accompanied by reduction in the current density of the peak EQE by a nearly two orders of magnitude compared to structures with m-plane sidewalls. By analyzing the EQE characteristics at the μ LED center and near the sidewalls, the improvements can be directly attributed to the increased radiative recombination from sidewalls with a-plane orientation. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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