التفاصيل البيبلوغرافية
| العنوان: |
Structural characterization of threading dislocation in α-Ga2O3 thin films on c- and m-plane sapphire substrates. |
| المؤلفون: |
Takane, Hitoshi, Konishi, Shinya, Hayasaka, Yuichiro, Ota, Ryo, Wakamatsu, Takeru, Isobe, Yuki, Kaneko, Kentaro, Tanaka, Katsuhisa |
| المصدر: |
Journal of Applied Physics; 7/14/2024, Vol. 136 Issue 2, p1-9, 9p |
| مصطلحات موضوعية: |
SUBSTRATES (Materials science), CARRIER density, SAPPHIRES, DISLOCATION density, DISLOCATION structure, THIN films, GALLIUM nitride films |
| مستخلص: |
We discuss the structure of threading dislocations in α-Ga2O3 thin films grown on c- and m-plane sapphire substrates. The thickness-dependent threading dislocation density in both films directly affects the electrical properties of the films including carrier concentration and mobility. Two distinct types of threading dislocations are identified for each of the c- and m-plane α-Ga2O3 thin films. The c-plane α-Ga2O3 thin film shows Burgers vectors of 1 / 3 [ 1 1 ¯ 01 ] and 1 / 3 [ 11 2 ¯ 0 ] , while the m-plane α-Ga2O3 thin film displays Burgers vectors of 1 / 3 [ 2 1 ¯ 1 ¯ 0 ] and 1 / 3 [ 1 1 ¯ 01 ]. This paper presents a detailed structure of the threading dislocations in α-Ga2O3, which has been little disclosed thus far mainly due to the difficulty in synthesizing the metastable α-Ga2O3. [ABSTRACT FROM AUTHOR] |
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