التفاصيل البيبلوغرافية
| العنوان: |
HfO2-based resistive random access memory with an ultrahigh switching ratio. |
| المؤلفون: |
Pan, Jinyan, He, Hongyang, Huang, Qiao, Gao, Yunlong, Lin, Yuxiang, He, Ruotong, Chen, Hongyu |
| المصدر: |
Journal of Applied Physics; 8/21/2024, Vol. 136 Issue 7, p1-12, 12p |
| مصطلحات موضوعية: |
NONVOLATILE random-access memory, MAGNETRON sputtering, ATOMIC layer deposition, METAL fibers, DATA warehousing, MAGNETRONS |
| مستخلص: |
Resistive Random Access Memory (RRAM) is considered one of the most promising candidates for big data storage. By using atomic layer deposition and magnetron sputtering, HfO2 thin films were prepared on ITO first, which exhibited good resistive switching (RS) characteristics in the structure of Ag/HfO2/ITO. By analyzing the RS mechanism, it is found that both metal conductive filaments and oxygen vacancy conductive filaments coexisted and Sn ion in ITO can influence the retention of RRAM. Furthermore, a device in the structure of Ag/HfO2/Pt was proposed and prepared, which exhibited excellent RS characteristics, including an ultrahigh switching ratio averaging up to 108 and low operating voltage. It is concluded that the difference in the work function between the top and bottom electrodes contributes to improving the switching ratio, reducing the operating voltage. In addition, the Ag/HfO2/Pt device is similar to the Ag/HfO2-based threshold switching selector in the structure and in characteristics of high switching ratio, besides non-volatile memory. Hence, the device is functionally equivalent to the combination of an RRAM and a threshold switching selector. It is the potential way to replace the conventional 1S1R structure memory. [ABSTRACT FROM AUTHOR] |
|
Copyright of Journal of Applied Physics is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) |
| قاعدة البيانات: |
Complementary Index |
Find this article in full text from Scitation.