التفاصيل البيبلوغرافية
| العنوان: |
Deep defects and their electron-capture cross sections in polymorphous silicon-germanium thin films. |
| المؤلفون: |
Meaudre, M., Gueunier-Farret, M. E., Meaudre, R., Kleider, J. P., Vignoli, S., Canut, B. |
| المصدر: |
Journal of Applied Physics; 8/1/2005, Vol. 98 Issue 3, p033531, 7p, 1 Color Photograph, 2 Charts, 4 Graphs |
| مصطلحات موضوعية: |
SILICON alloys, THIN films, PLASMA-enhanced chemical vapor deposition, POWDERS, NANOSTRUCTURED materials, SPACE charge, ELECTRIC charge |
| مستخلص: |
Hydrogenated silicon-germanium alloys (SiGe:H) are deposited by plasma-enhanced chemical vapor deposition in a plasma regime close to that of the formation of powder. It is thus possible to obtain nanostructured materials that we call polymorphous materials, pm-Si1-xGex:H. Studies of space-charge-limited currents and space-charge relaxation allow to get information on midgap states originating from Ge. It is observed that the electron-capture cross section of states at the Fermi level increases linearly with their concentration. This is supported by modulated photocurrent experiments. Finally, it is shown that the variations of both the Ge dangling bond concentration and their electron-capture cross section with Ge content account for the photoresponse in these materials. [ABSTRACT FROM AUTHOR] |
|
Copyright of Journal of Applied Physics is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) |
| قاعدة البيانات: |
Complementary Index |
Find this article in full text from Scitation.