التفاصيل البيبلوغرافية
| العنوان: |
Gate-controlled spin splitting in GaN/AlN quantum wells. |
| المؤلفون: |
Ikai Lo, Wang, W. T., Gau, M. H., Tsai, J. K., Tsay, S. F., Chiang, J. C. |
| المصدر: |
Applied Physics Letters; 2/20/2006, Vol. 88 Issue 8, p082108, 3p, 4 Graphs |
| مصطلحات موضوعية: |
PHYSICAL sciences, QUANTUM wells, ELECTROMAGNETIC fields, FREE electron theory of metals, ELECTRIC conductivity, ELECTRIC fields |
| مستخلص: |
The spin splitting of wurtzite GaN was calculated by 32×32 Hamiltonian with spin-orbital interaction. The band-folding effect generates two conduction bands ΔC1 and ΔC3 in which the p-wave probability shows a tremendous change when kz approaches the anticrossing zone. We found that a large spin plitting in GaN/AlN quantum wells is produced due to ΔC1-ΔC3 coupling, and is effectively controlled by electric field. Based on the mechanism and gate-controllable spin splitting, we proposed a p-wave-enhanced quantum well, InxGa1-xN/InyAl1-yN, for the application of the spin-polarized field effect transistor designed by Datta and Das [Appl. Phys. Lett. 56, 665 (1990)]. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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