التفاصيل البيبلوغرافية
| العنوان: |
Novel Two-Bit HfO2 Nanocrystal Nonvolatile Flash Memory. |
| المؤلفون: |
Yu-Hsien Lin, Chao-Hsin Chien, Ching-Tzung Lin, Chun-Yen Chang, Tan-Fu Lei |
| المصدر: |
IEEE Transactions on Electron Devices; Apr2006, Vol. 53 Issue 4, p782-789, 8p, 2 Diagrams, 3 Charts, 11 Graphs |
| مصطلحات موضوعية: |
SEMICONDUCTOR storage devices, SILICON oxide, FLASH memory, HAFNIUM oxide, X-ray photoelectron spectroscopy, NANOCRYSTALS, ION traps |
| مستخلص: |
This paper presents a novel nonvolatile poly-Si-oxide-nitride-oxide-silicon-type Flash memory that was fabricated using hafnium oxide (HfO2) nanocrystals as the trapping storage layer. The formation of HfO2 nanocrystals was confirmed using a number of physical analytical techniques, including energy-dispersive spectroscopy and X-ray photoelectron spectroscopy. These newly developed HfO2 nanocrystal memory cells exhibit very little lateral or vertical stored charge migration after 10 k program/erase (P/E) cycles. According to the temperature-activated Arrhenius model, we estimate that the activation energy lies within the range 2.1–3.3 eV. These HfO2 nanocrystal memories exhibit excellent data retention, endurance, and good reliability, even for the cells subjected to 10 k P/E cycles. These features suggest that such cells are very useful for high-density two-bit nonvolatile Flash memory applications. [ABSTRACT FROM AUTHOR] |
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