التفاصيل البيبلوغرافية
| العنوان: |
Surface passivation and capping of GaSb photodiode by chemical bath deposition of CdS. |
| المؤلفون: |
Chavan, Ashonita, Chandola, Abhinav, Sridaran, Sujatha, Dutta, Partha |
| المصدر: |
Journal of Applied Physics; 9/15/2006, Vol. 100 Issue 6, p064512, 4p, 1 Diagram, 4 Graphs |
| مصطلحات موضوعية: |
INTEGRATED circuit passivation, CADMIUM coatings, PHOTODIODES, X-ray photoelectron spectroscopy, DIELECTRIC devices, THIN films |
| مستخلص: |
A cadmium sulfide thin film deposited by a chemical bath deposition technique has been found to act as a passivating layer and a capping layer for GaSb photodiodes. X-ray photoelectron spectroscopy analysis shows the presence of Ga–S and Sb–S bonds along with the cadmium binding energies. Reduction in the reverse leakage current after the passivation is accompanied by a significant increase in the zero bias resistance-area product (14.29–100 Ω cm2). In addition, the dependence of the zero bias resistance-area product on the device dimension reduced considerably. There was no degradation in the dark current performance over a period of 3 months, indicating long-term stability. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |
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