التفاصيل البيبلوغرافية
| العنوان: |
Magnetotransport study on the defect levels of delta-doped In0.22Ga0.78As/GaAs quantum wells. |
| المؤلفون: |
Lo, Ikai, Lian, J. R., Wang, H. Y., Gau, M. H., Tsai, J. K., Chiang, Jih-Chen, Li, Y. J., Hsu, W. C. |
| المصدر: |
Journal of Applied Physics; 9/15/2006, Vol. 100 Issue 6, p063712, 5p, 1 Diagram, 4 Graphs |
| مصطلحات موضوعية: |
QUANTUM wells, ENERGY-band theory of solids, HALL effect, QUANTUM Hall effect, DOPED semiconductor superlattices, PHOTOCONDUCTIVITY, LOW temperatures |
| مستخلص: |
We have studied the electronic properties of delta-doped In0.22Ga0.78As/GaAs quantum wells (QWs) by van der Pauw Hall measurements and Shubnikov–de Haas measurements. From the temperature-dependent van der Pauw Hall measurements, we observed two kinds of donors, which have binding energies of 104±7 and 9.6±0.1 meV. After inserting In0.1Ga0.9As layers between the In0.22Ga0.78As and GaAs layers, a single donor with binding energy of 50±2 meV was observed. The carrier concentration determined by SdH measurements did not change after the QWs were illuminated at low temperature, which indicates that these deep donors could not produce a persistent photoconductivity in delta-doped In0.22Ga0.78As/GaAs QWs. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |
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