التفاصيل البيبلوغرافية
| العنوان: |
InAs/InGaAsP sidewall quantum dots on shallow-patterned InP (311)A. |
| المؤلفون: |
Zhou, D., Nötzel, R., van Otten, F. W. M., van Veldhoven, P. J., Eijkemans, T. J. |
| المصدر: |
Journal of Applied Physics; 9/15/2006, Vol. 100 Issue 6, p063505, 4p, 1 Color Photograph, 1 Diagram, 3 Graphs |
| مصطلحات موضوعية: |
QUANTUM dots, MOLECULAR beam epitaxy, PHOTOLUMINESCENCE, PIEZOELECTRICITY, NANOWIRES, OPTOELECTRONIC devices |
| مستخلص: |
Highly strained InAs quantum dots (QDs) embedded in InGaAsP are formed at the fast-growing [01-1] mesa sidewall on shallow-patterned InP (311)A substrates by chemical beam epitaxy. Temperature dependent photoluminescence (PL) reveals efficient carrier transfer from the adjacent dashlike QDs in the planar areas to the larger sidewall QDs resulting in well-distinguishable emission around 80 K. The large high-energy shift of the PL from the sidewall QDs as a function of excitation power density is ascribed to the screening of the internal piezoelectric field. The linear polarization of the PL from the sidewall QDs is reversed compared to that of the quantum dashes in the planar areas due to the more symmetric shape and possible nonuniform strain in the sidewall QDs. [ABSTRACT FROM AUTHOR] |
|
Copyright of Journal of Applied Physics is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) |
| قاعدة البيانات: |
Complementary Index |
Find this article in full text from Scitation.