التفاصيل البيبلوغرافية
| العنوان: |
Improvement of External Extraction Efficiency in GaN-Based LEDs by SiO2 Nanosphere Lithography. |
| المؤلفون: |
Min-Yann Hsieh, Cheng-Yin Wang, Liang-Yi Chen, Tzu-Pu Lin, Min-Yung Ke, Yun-Wei Cheng, Yi-Cheng Yu, Cheng Pin Chen, Dong-Ming Yeh, Chih-Feng Lu, Chi-Feng Huang, Yang, C. C., Jian Jang Huang |
| المصدر: |
IEEE Electron Device Letters; Jul2008, Vol. 29 Issue 7, p658-660, 3p, 5 Graphs |
| مصطلحات موضوعية: |
LITHOGRAPHY, CHROMOLITHOGRAPHY, ELECTRONIC equipment, NANOTECHNOLOGY, MOLECULAR electronics, PHYSICS |
| مستخلص: |
A practical approach to fabricate textured GaN-based light-emitting diodes (LEDs) by nanosphere lithography is presented. By spin coating a monolayer of SiO2 nanoparticles as the mask, textured LEDs can be fabricated. Both textured p-GaN and textured indium tin oxide LEDs show significant improvement over conventional LEDs without damaging the electrical characteristics. The results show that the method is promising for manufacturing low-cost high-efficient GaN-based LEDs. [ABSTRACT FROM AUTHOR] |
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