التفاصيل البيبلوغرافية
| العنوان: |
Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors. |
| المؤلفون: |
Jin-Seong Park, Tae-Woong Kim, Stryakhilev, Denis, Jae-Sup Lee, Sung-Guk An, Yong-Shin Pyo, Dong-Bum Lee, Yeon Gon Mo, Dong-Un Jin, Ho Kyoon Chung |
| المصدر: |
Applied Physics Letters; 7/6/2009, Vol. 95 Issue 1, p013503, 3p, 1 Color Photograph, 1 Diagram, 2 Graphs |
| مصطلحات موضوعية: |
LIGHT emitting diodes, POLYIMIDES, THIN film transistors, GALLIUM, ZINC oxide thin films |
| مستخلص: |
We have fabricated 6.5 in. flexible full-color top-emission active matrix organic light-emitting diode display on a polyimide (PI) substrate driven amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). The a-IGZO TFTs exhibited field-effect mobility (μFE) of 15.1 cm2/V s, subthreshold slope of 0.25 V/dec, threshold voltage (VTH) of 0.9 V. The electrical characteristics of TFTs on PI substrate, including a bias-stress instability after 1 h long gate bias at 15 V, were indistinguishable from those on glass substrate and showed high degree of spatial uniformity. TFT samples on 10 μm thick PI substrate withstood bending down to R=3 mm under tension and compression without any performance degradation. [ABSTRACT FROM AUTHOR] |
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