التفاصيل البيبلوغرافية
العنوان: |
Thermophysical properties of highly doped Si and Ge melts under microgravity. |
المؤلفون: |
Chathoth, S. M., Damaschke, B., Samwer, K., Schneider, S. |
المصدر: |
Journal of Applied Physics; Nov2009, Vol. 106 Issue 10, p103524-103528, 4p, 1 Color Photograph, 1 Chart, 6 Graphs |
مصطلحات موضوعية: |
PHYSICS research, THERMOPHYSICAL properties, SEMICONDUCTOR doping, REDUCED gravity environments, SEMICONDUCTORS |
مستخلص: |
We have investigated thermal expansion and surface tension of highly doped Si and Ge melts under microgravity conditions. The experiments were conducted in the TEMPUS facility on-board of a Zero-G aircraft. The thermophysical properties were quantified by analyzing the images of levitated droplets. Both Si and Ge are metallic in their solid state at the doping (P and Sb) of 1×1019 atoms cm-3. However, thermal expansion and surface tension of highly doped Si and Ge melts did not show significant changes in comparison with undoped samples. [ABSTRACT FROM AUTHOR] |
|
Copyright of Journal of Applied Physics is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) |
قاعدة البيانات: |
Complementary Index |