التفاصيل البيبلوغرافية
| العنوان: |
Thermophysical properties of highly doped Si and Ge melts under microgravity. |
| المؤلفون: |
Chathoth, S. M., Damaschke, B., Samwer, K., Schneider, S. |
| المصدر: |
Journal of Applied Physics; Nov2009, Vol. 106 Issue 10, p103524-103528, 4p, 1 Color Photograph, 1 Chart, 6 Graphs |
| مصطلحات موضوعية: |
PHYSICS research, THERMOPHYSICAL properties, SEMICONDUCTOR doping, REDUCED gravity environments, SEMICONDUCTORS |
| مستخلص: |
We have investigated thermal expansion and surface tension of highly doped Si and Ge melts under microgravity conditions. The experiments were conducted in the TEMPUS facility on-board of a Zero-G aircraft. The thermophysical properties were quantified by analyzing the images of levitated droplets. Both Si and Ge are metallic in their solid state at the doping (P and Sb) of 1×1019 atoms cm-3. However, thermal expansion and surface tension of highly doped Si and Ge melts did not show significant changes in comparison with undoped samples. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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