التفاصيل البيبلوغرافية
| العنوان: |
Growth of heteroepitaxial ZnO thin films by femtosecond pulsed-laser deposition. |
| المؤلفون: |
Millon, E., Albert, O., Loulergue, J. C., Etchepare, J., Hulin, D., Seiler, W., Perriere, J. |
| المصدر: |
Journal of Applied Physics; 12/1/2000, Vol. 88 Issue 11, p6937, 3p |
| مصطلحات موضوعية: |
THIN films, PULSED laser deposition, ZINC oxide |
| مستخلص: |
ZnO thin films have been grown on various substrates by femtosecond pulsed-laser deposition. According to optical microscopy and atomic force microscopy analyses, the production of droplets is not significant using femtosecond pulses. Smooth, dense, stoichiometric, crystalline, and textured hexagonal ZnO films are epitaxially grown on (0001) sapphire at 700 °C with an in-plane epitaxial relationship corresponding to a 30° rotation of the ZnO basal plane with respect to the sapphire. Nevertheless, channeling experiments and rocking curve measurements show that the crystalline quality is not as good as that obtained with nanosecond pulses. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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