التفاصيل البيبلوغرافية
| العنوان: |
6.1 W continuous wave front-facet power from Al-free active-region (λ=805 nm) diode lasers. |
| المؤلفون: |
Wade, J. K., Mawst, L. J., Botez, D., Nabiev, R. F., Jansen, M., Morris, J. A. |
| المصدر: |
Applied Physics Letters; 1/5/1998, Vol. 72 Issue 1, 1 Diagram, 3 Graphs |
| مصطلحات موضوعية: |
WAVE functions, DIODES |
| مستخلص: |
Al-free active-region diode lasers grown by low-pressure, metal-organic chemical vapor deposition and emitting at λ=805 nm have been optimized for high continuous wave output power. The 1-mm-long devices consisting of an InGaAsP/In[sub 0.5]Ga[sub 0.5]P/In[sub 0.5](Ga[sub 0.5]Al[sub 0.5])[sub 0.5]P laser structure have a threshold-current density, J[sub th], of 310 A/cm[sup 2] and relatively high values for the characteristic temperatures of the threshold current, T[sub 0] (135 K), and differential quantum efficiency, T[sub 1] (900 K). Lasers with 10%/90% coatings and a 100-μm-wide stripe provide a maximum cw output power of 6.1 W at a heatsink temperature of 10 °C. The devices fail due to catastrophic optical mirror damage (COMD), where the internal power density, P¯[sub COMD], is 17.4 MW/cm[sup 2]; that is, twice that for conventionally facet-coated, 810 nm emitting, AlGaAs active-region diode lasers. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |
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