التفاصيل البيبلوغرافية
| العنوان: |
730-nm-emitting Al-free active-region diode lasers with compressively strained InGaAsP quantum wells. |
| المؤلفون: |
Al-Muhanna, A., Wade, J. K., Mawst, L. J., Fu, R. J. |
| المصدر: |
Applied Physics Letters; 2/9/1998, Vol. 72 Issue 6, 1 Diagram, 4 Graphs |
| مصطلحات موضوعية: |
LASERS, QUANTUM wells, CHEMICAL vapor deposition |
| مستخلص: |
0.73-μm-emitting, Al-free active-region, strained (Δa/aapprox. 1.4%) InGaAsP single-quantum-well diode lasers have been grown by low-pressure metal–organic chemical-vapor deposition. A broad waveguide laser design with In[sub 0.5](Ga[sub 0.5]Al[sub 0.5])[sub 0.5]P cladding layers is utilized to achieve a large effective transverse spot size (d/Γ=0.433 μm) and to minimize carrier leakage from the active region. Threshold current densities of 514 A/cm[sup 2] (100-μm-wide stripe, L=1 mm), external differential quantum efficiencies of 60%, and characteristic temperature coefficients for the threshold current, T[sub 0], and external differential quantum efficiency characteristic temperature, T[sub 1], have values of 72 and 153 K, respectively. Continuous wave output powers of 1.4 W are obtained from facet-coated (90%/10%) devices operating at 735 nm. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |
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