التفاصيل البيبلوغرافية
| العنوان: |
High-performance, reliable, 730-nm-emitting Al-free active region diode lasers. |
| المؤلفون: |
Al-Muhanna, A., Wade, J. K., Earles, T., Lopez, J., Mawst, L. J. |
| المصدر: |
Applied Physics Letters; 11/16/1998, Vol. 73 Issue 20, 1 Diagram, 1 Chart, 6 Graphs |
| مصطلحات موضوعية: |
HIGH power lasers, QUANTUM wells |
| مستخلص: |
Compressively strained InGaAsP quantum well (QW) active (λ=732 nm) diode lasers achieve 2.9 W continuous wave (cw) power from facet-coated (4%/95%) 100-μm-wide apertures, with reliable operation demonstrated at 0.5 W cw power. A broad waveguide structure is used to obtain a large transverse spot size (d/Γ=0.433 μm), resulting in a low internal loss (α[sub i]∼2 cm[sup -1]) and narrow transverse far-field beam width (θ[sub 1/2]=38°). Record-high characteristic temperatures for the threshold current and the differential quantum efficiency (T[sub 0]=115 K and T[sub 1]=285 K) are obtained by growing on misoriented substrates. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |
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