التفاصيل البيبلوغرافية
| العنوان: |
Studies of Al2O3 barriers for use in tunnel junctions for nonlocal spin detection experiments. |
| المؤلفون: |
Abel, J., Garramone, J. J., Sitnitsky, I. L., LaBella, V. P. |
| المصدر: |
Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; Jul2010, Vol. 28 Issue 4, p702-705, 4p, 1 Chart, 4 Graphs |
| مصطلحات موضوعية: |
ALUMINUM oxide, THIN films, PHOTOELECTRONS, SILICON, VACUUM technology |
| مستخلص: |
Aluminum oxide films were grown on Si under ultrahigh vacuum conditions for use as tunnel barriers in spin injection studies. X-ray photoelectron spectroscopy was performed to characterize the film stoichiometry. It was observed that all the aluminum was bonded to the oxygen for the films grown in 1 nm steps. Whereas the 2 nm sample grown in one 2 nm step left a partially unoxidized aluminum film. Current-voltage measurements were performed and fitted to a tunnel model. The resistance area products fall within the range needed for spin injection and nonlocal readout. [ABSTRACT FROM AUTHOR] |
|
Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) |
| قاعدة البيانات: |
Complementary Index |
Find this article in full text from Scitation.