التفاصيل البيبلوغرافية
| العنوان: |
Temperature Dependent Characteristics of Nonreach-Through 4H-SiC Separate Absorption and Multiplication APDs for UV Detection. |
| المؤلفون: |
Ho-Young Cha, Soloviev, S., Zelakiewicz, S., Waldrab, P., Sandvik, P.M. |
| المصدر: |
IEEE Sensors Journal; Mar2008, Vol. 8 Issue 3, p233-237, 5p |
| مستخلص: |
Silicon carbide (SiC) separate absorption multiplication region avalanche photodiodes (SAM-APDs) for UV detection in harsh environment applications were designed and fabricated. The devices were intentionally designed to operate under nonreach-through conditions in order to eliminate field-induced leakage current. The gain of 2500 and quantum efficiency of ~45% at room temperature were achieved at the wavelength of 290-300 nm for a packaged device with an active area of 1 x 1 mm2. The temperature dependency of the current-voltage characteristics and responsivity was examined in the temperature range from room temperature to 230degC. [ABSTRACT FROM PUBLISHER] |
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