التفاصيل البيبلوغرافية
| العنوان: |
INVESTIGATION PROPERTIES OF a-Si1-xCx:H FILMS ELABORATED BY CO-SPUTTERING OF Si AND 6H-SiC. |
| المؤلفون: |
KEFFOUS, AISSA, CHERIET, ABDELHAK, BELKACEM, YOUCEF, MANSERI, AMAR, GABOUZE, NOUREDDINE, KECHOUANE, MOHAMED, BRIGHET, AMER, BOUKEZZATA, ASSIA, KACI, SAMIRA, MENOUS, ISA, NEZZAL, GHANIA, GUERBOUS, LAKHDAR, MENARI, HAMID |
| المصدر: |
Modern Physics Letters B; 7/30/2010, Vol. 24 Issue 19, p2101-2112, 12p, 1 Color Photograph, 1 Diagram, 8 Graphs |
| مصطلحات موضوعية: |
PROPERTIES of matter, SPECTRUM analysis, LUMINESCENCE, INFRARED spectroscopy, PHOTOLUMINESCENCE, SPECTROMETRY |
| مستخلص: |
Hydrogenated amorphous SiC films (a-Si1-xCx:H) were prepared by DC magnetron sputtering technique on p type Si(100) and corning 9075 substrates at low temperature, by using 32 sprigs of silicon carbide (6H-SiC). The deposited film a-Si1-xCx:H was realized under a mixture of argon and hydrogen gases. The (a-Si1-xCx:H) films have been investigated by scanning electronic microscopy equipped with EDS system (SEM-EDS), X-rays diffraction (XRD), secondary ions mass spectrometry (SIMS), Fourier transform infrared spectroscopy (FTIR), UV-visible-IR spectrophotometry, and photoluminescence (PL). XRD results showed that the deposited film was amorphous with a structure of a-Si0.81C0.19:H corresponding to 19 at.% carbon. The photoluminescence response of the samples was observed in the visible range at room temperature with two peaks centered at 463 nm (2.68 eV) and 542 nm (2.29 eV). The structural properties and the origin of the luminescence were discussed. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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