مؤتمر
Positive bilayer resists for 248- and 193-nm lithography.
| العنوان: | Positive bilayer resists for 248- and 193-nm lithography. |
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| المؤلفون: | Sooriyakumaran, Ratnam, Wallraff, Gregory M., Larson, Carl E., Fenzel-Alexander, Debra, Di Pietro, Richard A., Opitz, Juliann, Hofer, Donald C., LaTulip Jr., Douglas C., Simons, John P., Petrillo, Karen E., Babich, Katherina, Angelopoulos, Marie, Lin, Qinghuang, Katnani, Ahmad D. |
| المصدر: | Proceedings of SPIE; Nov1998 Part 2, Issue 1, p219-227, 9p |
| قاعدة البيانات: | Complementary Index |
| تدمد: | 0277786X |
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| DOI: | 10.1117/12.312411 |