التفاصيل البيبلوغرافية
| العنوان: |
Atomic Layer Deposition of SiO[sub 2] Using Catalyzed and Uncatalyzed Self-Limiting Surface Reactions. |
| المؤلفون: |
Klaus, J. W., Sneh, O., Ott, A. W., George, S. M. |
| المصدر: |
Surface Review & Letters; Jun99, Vol. 6 Issue 3/4, p435, 14p |
| مصطلحات موضوعية: |
SILICON oxide films, MOLECULAR beam epitaxy |
| مستخلص: |
SiO[sub 2] thin films were deposited with atomic layer control using self-limiting surface reactions. The SiO[sub 2] growth was achieved by separating the binary reaction SiCl[sub 4]+2H[sub 2]O→ SiO[sub 2]+4HCl into two half-reactions. Successive application of the half-reactions in an ABAB… sequence produced atomic-layer-controlled SiO[sub 2] deposition. SiO[sub 2] films were grown at temperatures of 600–800 K, with SiCl[sub 4] and H[sub 2]O reactant exposures of ∼10[sup 9] L (1 L = 10[sup -6] Torr s). Employing pyridine (C[sub 5]H[sub 5]N) as a catalyst, the SiO[sub 2] films could be deposited at much lower temperatures and reactant exposures. The pyridine catalyst lowered the required SiO[sub 2] deposition temperature from 600 K to 300 K and reduced the reactant exposure required for complete reactions from ∼10[sup 9] L to ∼ 10[sup 4] L. In addition, the SiO[sub 2] growth rates increased from 0.75 Å per AB cycle at 800 K to 2.1 Aring; per AB cycle at 300 K. The deposited films were stoichiometric SiO$[sub 2] and were extremely flat, with a roughness nearly identical to the initial substrate surface. The films also displayed dielectric breakdown strengths similar to thermally deposited SiO[sub 2] films. The ability to deposit conformal SiO[sub 2] thin films with atomic layer control over a wide range of temperatures should find numerous applications in thin film device fabrication. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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